J111 Fet

J111 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник

Transistor Fet J111
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J111 Datasheet, J111 JFET N Channel Transistor Datasheet, buy J111 Transistor. J111 JFET N-Channel Transistor TO-92 JavaScript seems to be disabled in your browser. For the best experience on our site, be sure to turn on Javascript in your browser. Order today, ships today. J111 – JFET N-Channel 35V 625mW Through Hole TO-92-3 from ON Semiconductor. Pricing and Availability on millions of electronic components from Digi-Key Electronics. The remaining Fairchild TO-92 N-channel line up comprises the J111, J112 and J113, although these parts are not marketed as low-noise items. The question is, can we substitute the 2N5457 without adjusting other component values? The answer varies from maybe through probably to absolutely, depending on the requirements of the circuit. Part Number: J111: Description (J111 / J112) JFET Chopper Transistors N-Channel: Manufacturers: ON Semiconductor Logo There is a preview and J111 download ( pdf file ) link at the bottom of this page.

Наименование прибора: J111

Тип транзистора: JFET

Полярность: N

Максимальная рассеиваемая мощность (Pd): 0.4 W

Предельно допустимое напряжение сток-исток |Uds|: 35 V

Максимально допустимый постоянный ток стока |Id|: 0.05 A

Максимальная температура канала (Tj): 150 °C

Выходная емкость (Cd): 3 pf

Сопротивление сток-исток открытого транзистора (Rds): 30 Ohm

Тип корпуса: TO92

J111 Datasheet (PDF)

0.1. j111 j112 j113 cnv.pdf Size:31K _philips

DISCRETE SEMICONDUCTORSDATA SHEETJ111; J112; J113N-channel silicon field-effecttransistorsJuly 1993Product specificationFile under Discrete Semiconductors, SC07Philips Semiconductors Product specificationN-channel silicon field-effect transistors J111; J112; J113DESCRIPTIONSymmetrical silicon n-channeljunction FETs in plastic TO-92envelopes. They are intended forapp

0.2. pmbfj111 pmbfj112 pmbfj113.pdf Size:47K _philips

PMBFJ111; PMBFJ112;PMBFJ113N-channel junction FETsRev. 03 4 August 2004 Product data sheet1. Product profile1.1 General descriptionSymmetrical N-channel junction FETs in a SOT23 package.1.2 Features High-speed switching Interchangeability of drain and source connections Low RDSon at zero gate voltage (

0.3. pmbfj111 pmbfj112 pmbfj113 cnv 2. Adobe illustrator for mac free trial. pdf Size:32K _philips Kik download mac.

DISCRETE SEMICONDUCTORSDATA SHEETPMBFJ111;PMBFJ112; PMBFJ113N-channel junction FETsApril 1995Product specificationFile under Discrete Semiconductors, SC07Philips Semiconductors Product specificationPMBFJ111;N-channel junction FETsPMBFJ112; PMBFJ113FEATURES High-speed switching Interchangeability of drain andsource connections3handbook, halfpage Low

0.4. ssm3j111tu.pdf Size:255K _toshiba

SSM3J111TU TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type SSM3J111TU High Speed Switching Applications Unit: mm 2.5V drive 2.10.1 Low on-resistance: Ron = 480m (max) (@VGS = -4 V) 1.70.1Ron = 680m (max) (@VGS = -2.5 V) Absolute Maximum Ratings (Ta = 25C) 132Characteristic Symbol Rating UnitDrain-Source voltage VDS -20 VGate-Source vol

0.5. mmbfj111 mmbfj112 mmbfj113.pdf Size:151K _fairchild_semi

August 2012J111 / J112 / J113 / MMBFJ111 / MMBFJ112 / MMBFJ112_SB51338 / MMBFJ113N-Channel SwitchFeatures This device is designed for low level analog switching, sample and hold circuits and chopper stabilized amplifiers. Sourced from Process 51. Source & Drain are interchangeable.MMBFJ111J111 MMBFJ112J112 MMBFJ112_SB51338J113 MMBFJ113GSSOT-23G TO-92 Mark

0.6. j111 j112 j113 mmbfj111 mmbfj112 mmbfj113.pdf Size:488K _fairchild_semi

J111 MMBFJ111J112 MMBFJ112J113 MMBFJ113GSG TO-92S SOT-23 DDMark: 6P / 6R / 6SNOTE: Source & Drain are interchangeableN-Channel SwitchThis device is designed for low level analog switching, sampleand hold circuits and chopper stabilized amplifiers. Sourcedfrom Process 51.Absolute Maximum Ratings* TA = 25C unless otherwise notedSymbol Parameter Value UnitsVDG D

0.7. j111 j112 j113 sst111 sst112 sst113.pdf Size:52K _vishay

J/SST111 SeriesVishay SiliconixN-Channel JFETsJ111 SST111J112 SST112J113 SST113PRODUCT SUMMARYPart Number VGS(off) (V) rDS(on) Max (W) ID(off) Typ (pA) tON Typ (ns)J/SST111 3 to 10 30 5 4J/SST112 1 to 5 50 5 4J/SST113 v3 100 5 4FEATURES BENEFITS APPLICATIONSD Low On-Resistance: 111

0.8. j111 j112.pdf Size:85K _onsemi

Transistor Fet J111

J111, J112JFET Chopper TransistorsN-Channel DepletionFeatureshttp://onsemi.com Pb-Free Packages are Available*1 DRAINMAXIMUM RATINGSRating Symbol Value Unit3Drain-Gate Voltage VDG -35 VdcGATEGate -Source Voltage VGS -35 VdcGate Current IG 50 mAdc2 SOURCETotal Device Dissipation @ TA = 25C PD 350 mWDerate above = 25C 2.8 mW/CLead Temperature TL 300

Другие MOSFET.. IXTZ35N25MB, IXTZ42N20MA, IXTZ42N20MB, IXTZ67N10MA, IXTZ67N10MB, J108, J109, J110, IRF3710, J112, J113, J211, J212, JANSR2N7272, JANSR2N7275, JANSR2N7278, JANSR2N7292.

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