7426 Mosfet



  • 30VN-Channel MOSFET General Description Product Summary VDS ID (at V GS =10V) 40A R DS(ON) (at V GS =10V) MOSFET technology with a low resistance package to provide extremely low R DS(ON.
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Type Designator: AON7426

172-7426-E Kobiconn DC Power Cords 2.1 DC JACK-STRAIGHT 72 BLACK/ZIP CORD datasheet, inventory, & pricing.

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 29 W

Maximum Drain-Source Voltage |Vds|: 30 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 2.35 V

Maximum Drain Current |Id|: 40 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 44 nC

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Rise Time (tr): 4 nS

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Drain-Source Capacitance (Cd): 283 pF

Maximum Drain-Source On-State Resistance (Rds): 0.0055 Ohm

Package: DFN3X3EP

AON7426 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

AON7426 Datasheet (PDF)

0.1. aon7426.pdf Size:274K _aosemi

AON742630V N-Channel MOSFETGeneral Description Product SummaryVDS30VThe AON7426 combines advanced trench MOSFETtechnology with a low resistance package to provide ID (at VGS=10V) 40Aextremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS=10V)

Apple itunes for mac. 8.1. aon7422e.pdf Size:352K _aosemi

AON7422E30V N-Channel MOSFETGeneral Description Product SummaryVDS30VThe AON7422E combines advanced trench MOSFETtechnology with a low resistance package to provide ID (at VGS=10V) 40Aextremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS=10V)

8.2. aon7421.pdf Size:267K _aosemi

AON742120V P-Channel MOSFETGeneral Description Product SummaryVDS-20VThe AON7421 combines advanced trench MOSFETtechnology with a low resistance package to provide ID (at VGS=-10V) -50Aextremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS=-10V)

8.3. aon7422l.pdf Size:164K _aosemi

AON742230V N-Channel MOSFETGeneral Description Product SummaryVDS30VThe AON7422 uses advanced trench technology toprovide excellent RDS(ON) with low gate charge. ID (at VGS=10V) 40AThis device is ideal for load switch and battery protection RDS(ON) (at VGS=10V)

8.4. aon7424.pdf Size:238K _aosemi

AON742430V N-Channel MOSFETGeneral Description Product SummaryVDS30VThe AON7424 combines advanced trench MOSFETtechnology with a low resistance package to provide ID (at VGS=10V) 40Aextremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS=10V) Calibri mac download.

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8.5. aon7428.pdf Size:163K _aosemi

AON742830V N-Channel MOSFETGeneral Description Product SummaryVDS30VThe AON7428 uses advanced trench technology toprovide excellent RDS(ON) with low gate charge. ID (at VGS=10V) 50AThis device is ideal for load switch and battery protection RDS(ON) (at VGS=10V)

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8.6. aon7423.pdf Size:290K _aosemi

AON742320V P-Channel MOSFETGeneral Description Product SummaryVDS-20VThe AON7423 combines advanced trench MOSFETtechnology with a low resistance package to provide ID (at VGS=-4.5V) -50Aextremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS=-4.5V)

8.7. aon7422g.pdf Size:259K _aosemi

AON7422G30V N-Channel MOSFETGeneral Description Product SummaryVDS Low RDS(ON) 30V Optimized for Load Switch ID (at VGS=10V) 32A High Current Capability RDS(ON) (at VGS=10V)

Datasheet: AON7412, AON7414, AON7416, AON7418, AON7421, AON7422E, AON7423, AON7424, J111, AON7428, AON7430, AON7432, AON7436, AON7440, AON7444, AON7446, AON7448.



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